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Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates

Vladimir Ivanovich Shtanov 1
Vladimir Ivanovich Shtanov
, 
Tatiana Borisovna Shatalova 1
Tatiana Borisovna Shatalova
, 
Lada Valerievna Yashina 1
Lada Valerievna Yashina
, 
Robert Tsanov Bondokov 2
Robert Tsanov Bondokov
, 
Igor Vsevolodovich Saunin 2
Igor Vsevolodovich Saunin
10.1070/MC2004v014n04ABEH001950
Published 2004-09-07
Communication , Volume 14, Issue 4, 136-137
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Shtanov V. I. et al. Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates // Mendeleev Communications. 2004. Vol. 14. No. 4. pp. 136-137.
GOST all authors (up to 50) Copy
Shtanov V. I., Shatalova T. B., Yashina L. V., Bondokov R. T., Saunin I. V. Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates // Mendeleev Communications. 2004. Vol. 14. No. 4. pp. 136-137.
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TY - JOUR
DO - 10.1070/MC2004v014n04ABEH001950
UR - https://mendcomm.colab.ws/publications/10.1070/MC2004v014n04ABEH001950
TI - Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates
T2 - Mendeleev Communications
AU - Shtanov, Vladimir Ivanovich
AU - Shatalova, Tatiana Borisovna
AU - Yashina, Lada Valerievna
AU - Bondokov, Robert Tsanov
AU - Saunin, Igor Vsevolodovich
PY - 2004
DA - 2004/09/07
PB - Mendeleev Communications
SP - 136-137
IS - 4
VL - 14
ER -
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@article{2004_Shtanov,
author = {Vladimir Ivanovich Shtanov and Tatiana Borisovna Shatalova and Lada Valerievna Yashina and Robert Tsanov Bondokov and Igor Vsevolodovich Saunin},
title = {Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates},
journal = {Mendeleev Communications},
year = {2004},
volume = {14},
publisher = {Mendeleev Communications},
month = {Sep},
url = {https://mendcomm.colab.ws/publications/10.1070/MC2004v014n04ABEH001950},
number = {4},
pages = {136--137},
doi = {10.1070/MC2004v014n04ABEH001950}
}
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Shtanov, Vladimir Ivanovich, et al. “Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates.” Mendeleev Communications, vol. 14, no. 4, Sep. 2004, pp. 136-137. https://mendcomm.colab.ws/publications/10.1070/MC2004v014n04ABEH001950.

Abstract

Phase composition, microstructure and orientation were investigated for GeTe films grown on BaF2 and Pb1 – xSnxTe (x = 0, 0.05 or 0.2) substrates by hot wall epitaxy.

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