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New n-type semiconductor material based on styryl fullerene for organic field-effect transistors

Airat Ramilevich Tuktarov 1
Airat Ramilevich Tuktarov
Nuri Mamedeevich Chobanov 1
Nuri Mamedeevich Chobanov
Zarema Rashitovna Sadretdinova 1
Zarema Rashitovna Sadretdinova
Renat Bayazitovich Salikhov 2
Renat Bayazitovich Salikhov
Ilnur Nailevich Mullagaliev 2
Ilnur Nailevich Mullagaliev
Timur Renatovich Salikhov 2
Timur Renatovich Salikhov
Published 2021-09-08
CommunicationVolume 31, Issue 5, 641-643
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Tuktarov A. R. et al. New n-type semiconductor material based on styryl fullerene for organic field-effect transistors // Mendeleev Communications. 2021. Vol. 31. No. 5. pp. 641-643.
GOST all authors (up to 50) Copy
Tuktarov A. R., Chobanov N. M., Sadretdinova Z. R., Salikhov R. B., Mullagaliev I. N., Salikhov T. R., Dzhemilev U. M. New n-type semiconductor material based on styryl fullerene for organic field-effect transistors // Mendeleev Communications. 2021. Vol. 31. No. 5. pp. 641-643.
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TY - JOUR
DO - 10.1016/j.mencom.2021.09.016
UR - https://mendcomm.colab.ws/publications/10.1016/j.mencom.2021.09.016
TI - New n-type semiconductor material based on styryl fullerene for organic field-effect transistors
T2 - Mendeleev Communications
AU - Tuktarov, Airat Ramilevich
AU - Chobanov, Nuri Mamedeevich
AU - Sadretdinova, Zarema Rashitovna
AU - Salikhov, Renat Bayazitovich
AU - Mullagaliev, Ilnur Nailevich
AU - Salikhov, Timur Renatovich
AU - Dzhemilev, Usein Memetovich
PY - 2021
DA - 2021/09/08
PB - Mendeleev Communications
SP - 641-643
IS - 5
VL - 31
ER -
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@article{2021_Tuktarov,
author = {Airat Ramilevich Tuktarov and Nuri Mamedeevich Chobanov and Zarema Rashitovna Sadretdinova and Renat Bayazitovich Salikhov and Ilnur Nailevich Mullagaliev and Timur Renatovich Salikhov and Usein Memetovich Dzhemilev},
title = {New n-type semiconductor material based on styryl fullerene for organic field-effect transistors},
journal = {Mendeleev Communications},
year = {2021},
volume = {31},
publisher = {Mendeleev Communications},
month = {Sep},
url = {https://mendcomm.colab.ws/publications/10.1016/j.mencom.2021.09.016},
number = {5},
pages = {641--643},
doi = {10.1016/j.mencom.2021.09.016}
}
MLA
Cite this
MLA Copy
Tuktarov, Airat Ramilevich, et al. “New n-type semiconductor material based on styryl fullerene for organic field-effect transistors.” Mendeleev Communications, vol. 31, no. 5, Sep. 2021, pp. 641-643. https://mendcomm.colab.ws/publications/10.1016/j.mencom.2021.09.016.

Keywords

[60]fullerene
electron mobility
organic field-effect transistor
organic semiconductor
PCBM
styryl fullerene

Abstract

Organic field-effect transistors with styryl fullerene as a semi conductor layer applied by centrifugation are considered. Electron mobility in the transistors was 0.067 ± 10% cm2 V−1 s−1, whereas the mobility of electrons in these devices after the vacuum deposition of a semiconductor layer was much lower (0.023 ± 10% cm2 V−1 s−1).

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