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Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer

Alisa Aydarovna Rezvanova 1
Alisa Aydarovna Rezvanova
, 
Lyubov' Anatol'evna Frolova 1
Lyubov' Anatol'evna Frolova
, 
10.1016/j.mencom.2016.01.011
Published 2015-12-30
Communication , Volume 26, Issue 1, 26-28
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Rezvanova A. A., Frolova L. A., Troshin P. A. Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer // Mendeleev Communications. 2015. Vol. 26. No. 1. pp. 26-28.
GOST all authors (up to 50) Copy
Rezvanova A. A., Frolova L. A., Troshin P. A. Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer // Mendeleev Communications. 2015. Vol. 26. No. 1. pp. 26-28.
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TY - JOUR
DO - 10.1016/j.mencom.2016.01.011
UR - https://mendcomm.colab.ws/publications/10.1016/j.mencom.2016.01.011
TI - Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer
T2 - Mendeleev Communications
AU - Rezvanova, Alisa Aydarovna
AU - Frolova, Lyubov' Anatol'evna
AU - Troshin, Pavel Anatol'evich
PY - 2015
DA - 2015/12/30
PB - Mendeleev Communications
SP - 26-28
IS - 1
VL - 26
ER -
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@article{2015_Rezvanova,
author = {Alisa Aydarovna Rezvanova and Lyubov' Anatol'evna Frolova and Pavel Anatol'evich Troshin},
title = {Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer},
journal = {Mendeleev Communications},
year = {2015},
volume = {26},
publisher = {Mendeleev Communications},
month = {Dec},
url = {https://mendcomm.colab.ws/publications/10.1016/j.mencom.2016.01.011},
number = {1},
pages = {26--28},
doi = {10.1016/j.mencom.2016.01.011}
}
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Rezvanova, Alisa Aydarovna, et al. “Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer.” Mendeleev Communications, vol. 26, no. 1, Dec. 2015, pp. 26-28. https://mendcomm.colab.ws/publications/10.1016/j.mencom.2016.01.011.

Abstract

The design of high-speed optical memory elements based on organic field-effect transistors comprising [60]fullerene as an n-type semiconductor and 1,3-dihydro-1,3,3-trimethylspiro(2H-indole-2,3’-[3H]naphth[2,1-b][1,4]oxazine) as a light-sensitive component placed at the interface with an aluminum oxide gate dielectric has been developed. The memory elements exhibit a switching coefficient of ∼104 and a minimal programming time of 0.5–1.5ms.

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