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Formation of threadlike nanostructures of silicon and silicon carbide by chemical vapor deposition

Nikolai Mihailovich Rubtsov 1
Nikolai Mihailovich Rubtsov
Boris Semenovich Seplyarskii 1
Boris Semenovich Seplyarskii
Georgii Igorevich Tsvetkov 1
Georgii Igorevich Tsvetkov
Published 2010-11-02
CommunicationVolume 20, Issue 6, 357-358
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Rubtsov N. M., Seplyarskii B. S., Tsvetkov G. I. Formation of threadlike nanostructures of silicon and silicon carbide by chemical vapor deposition // Mendeleev Communications. 2010. Vol. 20. No. 6. pp. 357-358.
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Rubtsov N. M., Seplyarskii B. S., Tsvetkov G. I. Formation of threadlike nanostructures of silicon and silicon carbide by chemical vapor deposition // Mendeleev Communications. 2010. Vol. 20. No. 6. pp. 357-358.
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TY - JOUR
DO - 10.1016/j.mencom.2010.11.020
UR - https://mendcomm.colab.ws/publications/10.1016/j.mencom.2010.11.020
TI - Formation of threadlike nanostructures of silicon and silicon carbide by chemical vapor deposition
T2 - Mendeleev Communications
AU - Rubtsov, Nikolai Mihailovich
AU - Seplyarskii, Boris Semenovich
AU - Tsvetkov, Georgii Igorevich
PY - 2010
DA - 2010/11/02
PB - Mendeleev Communications
SP - 357-358
IS - 6
VL - 20
ER -
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@article{2010_Rubtsov,
author = {Nikolai Mihailovich Rubtsov and Boris Semenovich Seplyarskii and Georgii Igorevich Tsvetkov},
title = {Formation of threadlike nanostructures of silicon and silicon carbide by chemical vapor deposition},
journal = {Mendeleev Communications},
year = {2010},
volume = {20},
publisher = {Mendeleev Communications},
month = {Nov},
url = {https://mendcomm.colab.ws/publications/10.1016/j.mencom.2010.11.020},
number = {6},
pages = {357--358},
doi = {10.1016/j.mencom.2010.11.020}
}
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Rubtsov, Nikolai Mihailovich, et al. “Formation of threadlike nanostructures of silicon and silicon carbide by chemical vapor deposition.” Mendeleev Communications, vol. 20, no. 6, Nov. 2010, pp. 357-358. https://mendcomm.colab.ws/publications/10.1016/j.mencom.2010.11.020.

Abstract

Synthesis of threadlike nanostructures of silicon and silicon carbide by chemical vapor deposition (CVD) using dichlorosilane pyrolysis in the presence of CCl4 and CF2Cl2 in nitrogen has been carried out. Nitrogen molecules react on active surface areas of the substrate originating during etching with a gaseous mixture of 7.5% SiH2Cl2–7.5% CCl4–85% N2.

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