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Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method

Nikolai Mihailovich Rubtsov 1
Nikolai Mihailovich Rubtsov
, 
Boris Semenovich Seplyarskii 1
Boris Semenovich Seplyarskii
, 
Georgii Vladimirovich Bichurov 2
Georgii Vladimirovich Bichurov
, 
Victor Iosifovich Chernysh 1
Victor Iosifovich Chernysh
, 
Georgii Igorevich Tsvetkov 1
Georgii Igorevich Tsvetkov
10.1016/j.mencom.2009.01.018
Published 2009-01-19
Communication , Volume 19, Issue 1, 45-46
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Rubtsov N. M. et al. Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method // Mendeleev Communications. 2009. Vol. 19. No. 1. pp. 45-46.
GOST all authors (up to 50) Copy
Rubtsov N. M., Seplyarskii B. S., Bichurov G. V., Chernysh V. I., Tsvetkov G. I. Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method // Mendeleev Communications. 2009. Vol. 19. No. 1. pp. 45-46.
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TY - JOUR
DO - 10.1016/j.mencom.2009.01.018
UR - https://mendcomm.colab.ws/publications/10.1016/j.mencom.2009.01.018
TI - Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method
T2 - Mendeleev Communications
AU - Rubtsov, Nikolai Mihailovich
AU - Seplyarskii, Boris Semenovich
AU - Bichurov, Georgii Vladimirovich
AU - Chernysh, Victor Iosifovich
AU - Tsvetkov, Georgii Igorevich
PY - 2009
DA - 2009/01/19
PB - Mendeleev Communications
SP - 45-46
IS - 1
VL - 19
ER -
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@article{2009_Rubtsov,
author = {Nikolai Mihailovich Rubtsov and Boris Semenovich Seplyarskii and Georgii Vladimirovich Bichurov and Victor Iosifovich Chernysh and Georgii Igorevich Tsvetkov},
title = {Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method},
journal = {Mendeleev Communications},
year = {2009},
volume = {19},
publisher = {Mendeleev Communications},
month = {Jan},
url = {https://mendcomm.colab.ws/publications/10.1016/j.mencom.2009.01.018},
number = {1},
pages = {45--46},
doi = {10.1016/j.mencom.2009.01.018}
}
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Rubtsov, Nikolai Mihailovich, et al. “Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method.” Mendeleev Communications, vol. 19, no. 1, Jan. 2009, pp. 45-46. https://mendcomm.colab.ws/publications/10.1016/j.mencom.2009.01.018.

Abstract

Both solid sodium azide and ammonium chloride react with volatile silicon-containing compounds under external initiation; in the reactions Si–N bond forms as evidenced by detecting the emission spectrum of SiN (C–A2P) radicals.

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